MT53E1G32D2FW-046 AUT:B vs MT53E512M32D2FW-046 AAT:D Comparación
Comparación detallada lado a lado de MT53E1G32D2FW-046 AUT:B por Micron Technology y MT53E512M32D2FW-046 AAT:D por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT53E1G32D2FW-046 AUT:B - 32Gbit LPDDR4X DRAM | Micron
MT53E1G32D2FW-046 AUT:B ✓ ActivoMicron Technology
MT53E512M32D2FW-046 - 16Gb LPDDR4 SDRAM 2133MHz | Micron
MT53E512M32D2FW-046 AAT:D ✓ ActivoComparación de especificaciones
| Parámetro | MT53E1G32D2FW-046 AUT:B | MT53E512M32D2FW-046 AAT:D |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $273,51 | $13,75 |
| Tipo de memoria | SDRAM - Mobile LPDDR4X | SDRAM - Mobile LPDDR4/LPDDR4X |
| Tamaño de memoria | 32 Gbit (4 GB) | 16 Gbit |
| Organización de memoria | x32 Parallel | 512M x 32 |
| Clock Frequency | 2.133 GHz | 2133 MHz (2.133 GHz) |
| Access Time / Clock Cycle | 3.5 ns | — |
| Interfaz | Parallel | Parallel |
| Encapsulado | 200-TFBGA (10 mm x 14.5 mm) | 200-TFBGA (10 mm x 14.5 mm) |
| Temperatura de funcionamiento | -40C to +125C | -40C to +105C (AAT:D grade) |
| Temperature Grade | Automotive (AUT) | — |
| Self-Refresh | Auto self-refresh | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Write Leveling | Yes | — |
| ZQ Calibration | Yes | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| VDDQ Supply Voltage | [DATA_NEEDED: VDDQ supply voltage] | — |
| VDD Supply Voltage | [DATA_NEEDED: VDD supply voltage] | — |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Cycle Time | — | 3.5 ns |
| Supply Voltage VDD | — | 1.1 V |
| Supply Voltage VDDQ (LPDDR4) | — | 1.1 V |
| Supply Voltage VDDQ (LPDDR4X) | — | 0.6 V |
| Core Voltage VDD2 | — | 1.8 V |
| Automotive Qualification | — | AEC-Q100 (AUT:D variant verified; AAT:D automotive grade per Micron catalog) |
| Memory Configuration Speed Grade | — | -046 (2133) |